以现有椭偏仪为基础，进行椭偏仪在位监测电化学沉积的构建。电化学沉积过程涉及到界面层、薄膜生长和到固液界面的问题，从另外一个角度对电化学沉积的解构，也为下一步进行固液界面的研究提供一种方法。
椭偏仪在位表征电化学沉积的系统搭建（十）- 研究内容和意义
5.研究内容和意义
如下图1-19为用于分析梯度层的光学模型。当梯度层的光响应用多层结构表示时如图1-19(a)所示，其厚度dj和介电函数
都是必需的。然而，由于存在大量的分析参数，使用这种光学模型进行椭偏谱分析通常比较困难。此外，该分析中的拟合误差随着分析误差的传播逐渐向顶层增加。但是在VSA中，复杂的底层结构用伪介电函数表示，只有厚度(d)和介电函数
如图1-19(b)。因此，即使样品的介电函数在生长方向上不断变化，VSA的分析也可以相对容易地进行。
图1-19用于分析梯度层的光学模型:(a)多层模型和(b)虚拟衬底近似(VSA)
图1-20为VSA的光学模型。在这个图中,
和
表示计算出的伪介电函数，n表示在一定间隔内测量到的实时光谱数。VSA的关键特征是利用伪介电函数随厚度的变化进行分析，即
在分析
时，如图1-20所示
被用作虚拟基板，从
的变化中，对和之间形成的薄覆盖层进行了表征。
图1-20VSA的光学模型
表1-1中的方法各有各的优缺点，需要根据情况选择恰当的分析方法。例如当一层的介电函数未知时，我们使用GEM来得到该层的介电函数。由GEM确定的几个介电函数可以构造一个光学数据库。基于这样的光学数据库，我们可以利用LRA或VSA对薄膜结构进行实时控制。
本文根据实验前期研究，以现有椭偏仪为基础，进行椭偏仪在位监测电化学沉积的构建。电化学沉积过程涉及到界面层、薄膜生长和到固液界面的问题，从另外一个角度对电化学沉积的解构，也为下一步进行固液界面的研究提供一种方法。
因此本文主要的研究内容包括：
1、在位监控装置的设计。主要展开电解池的设计，包括用COMSOL进行电场分布的拟合，从而设计电极的位置等。并根据实验和光路的调节的优化制备了两种类型的电解池。
2、不同溶液浓度对实验的影响。用Pb溶液为案例，进行了不同浓度的Pb溶液的椭偏谱。并以ITO为透明工作电极，对电化学沉积过程进行了研究。
3、椭偏仪在位监测Cu2O薄膜的生长过程。研究包括全谱(300-800nm)椭偏仪Cu2O薄膜沉积的准在位监测以及单波长(380nm)椭偏仪对Cu2O薄膜沉积的在位监测。通过控制电流薄膜沉积(-0.4mA)，然后在每沉积180s后停止生长，进行椭偏谱的测试，接着对椭偏谱再利用VSA分析法解构出其光学常数和厚度。从而得到生长厚度随着时间的变化函数，再利用单波长的椭偏参数进行解构。
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