椭偏仪在位表征电化学沉积的系统搭建（二十九）- 能级寿命和电导率

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椭偏仪在位表征电化学沉积的系统搭建（二十九）- 能级寿命和电导率

能级寿命和电阻率及电导率有如下关系式，Γ=ħγ，能级寿命=1/γ，电阻率ρ=γ/而电导率=1/ρ，通过求得的电阻率就可得到电导率。前面拟合已经得到的Drude中的等离子体频率(w_p)、阻尼频率(Γ)及Lorentz Oscillator参数：振幅(A)、中心能量(E)、展宽能量(Γ)和光学常数：n，k，，，如表4-2所示。把相应的参数带入上述公式计算得到CU₂O沉积薄膜的能级寿命和电导率如图4-15和图4-16所示。

图4-15是不同沉积时间下对应的CU₂O沉积薄膜的能级寿命，可以看到能级寿命在10^-16-10^-14s数量级之间。对于Drude能级寿命在所有沉积时间下都在10^-15s数量级，且有随着时间的增加而减小的趋势。Drude模型描述的是金属的特性，所以这里反映的是Au衬底的信息，而随着沉积时间的增加沉积薄膜变厚Au衬底的信息将变小，Drude能级寿命减小趋势可由此而来。振子1的能级寿命对应于E_OA、E_OB、E_OC和E_OD跃迁激子，其值大都在10^-16s数量级，随时间的变化规律不明显。振子2的能级寿命对应于E_OAE_OBE_OCE_ODE_1A跃迁激子，360s和720s的在10^-15s数量级，其余在10^-16s数量级，随着时间的增加有减小的趋势。振子3的能级寿命对应于E_OC、E_OD和E_1A跃迁激子，其变化比较大，360s和720s在10^-14s数量级，而180s、540s、900s在10^-16s数量级，1080s在10^-15s数量级。振子4的能级对应于E_1A、E_1B跃迁激子，在10^-16s数量级及10^-15s数量级且随时间的增加先减小后增大。

图4-15 CU₂O随沉积时间变化的能级寿命

通过中心能量和能级寿命分析归纳出拟合得到的中心能量对应的跃迁和能级寿命如表4-3所示。可以看到发生zui多的跃迁是E_OC和E_OD跃迁，发生zui少的跃迁是E_1B的跃迁。

图4-16是通过Drude模型中的参数计算得到的电导率，可以看到180s和540s的电导率为10³S/m数量级，它接近金属的导电特性。对于180s由前面的拟合厚度知此时沉积的CU₂O薄膜厚度为48nm，结合椭偏仪的测试穿透深度知其可同时探测到Au基底的信息，故而这里的电导率较大。对于540s的电导率可能是由于薄膜沉积不均匀，使得测试的点在该沉积时间下厚度并没有达到层状模型拟合出来的163nm，可能测试的刚好是岛状生长模型假设下岛与岛之间的区域，和180s的一样反映的更多是Au基底的信息，故而其值较大。360s、720s、900s和1080s的电导率在10⁴S/m数量级，反映的是半导体电导率特性，这与X-ray测试结果相吻合，即沉积的薄膜是CU₂O。

图4-16 Drude 模型中CU₂O电导率随沉积时间的变化

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