scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

耦合器件)或CMOS(互补金属氧化物半导体)相机直接提供数字化数据流，而视频速率CCD相机的模拟输出必须通过模数转换器进行转换。如果数字CCD相机的帧速率足够快(约10赫兹)，可以实现实时成像，那么它就适合克尔显微镜。CCD芯片的冷却提高了信噪比，图像增强器可以进一步提高灵敏度。在实际应用中，需要对图像亮度进行适当调整，以满足摄像机的zui佳动态范围。增大分析仪角度或将光圈开到消光交叉的宽度以外，从而增大背景强度，是实现大信噪比的实用手段。可能的对比度损失并不是一个严重的问题，因为对比度可以通过电子差分成像来增强。为了创建差分图像，首先通过对相同样本状态的重复图像求和来存储平均参考图像。然后从 ...

像增强器与sCMOS或CCD相机相结合，或微通道板（MCP）和基于光电阴极的宽视场探测器结合。由于增强器的增益较大，时间门控图像增强器的动态范围较低，且成本昂贵。由于涉及的超高电压，MCP在zui大可实现的全局计数率上是很有限的，且实际使用同样昂贵和复杂。标准CMOS技术中单光子雪崩二极管（SPADs）的发展，以及大型CMOS SPAD阵列的引入，创造了具有并行读出和快速数据处理的多通道单光子计数的潜力。因为CMOS技术支持模块化、可扩展构建，具有大型计数器和快速电子处理能力，其完全集成了的门控选项，因此SPADs可以达到高定时性能，并且没有全局计数限制。直到zui近，兆像素时间分辨SPAD相 ...

B-11 sCMOS相机组合使用。显微镜由运行内建插件Micro-Manager控制。而荧光光源由相机通过TTL连接触发，使用电子快门控制。Lumencor的TTL触发输入可以外部控制集成的八个光源的选择以及开关，凭借精确的电子控制，切换速度间隔可达10μs。参考文献Wiktor J, Gynnå A H, Leroy P, et al. RecA finds homologous DNA by reduced dimensionality search[J]. Nature, 2021, 597(7876): 426-429.基因编码电压指示剂 （GEVI） JEDI-1P 在解离的大鼠皮质 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...

CCD或者sCMOS用于流式细胞术速度不足的问题。而FIRE的核心特征在于样品上每个单独点均能够以不同射频激发荧光。在两束移频激光之间干涉所产生的拍频处，数字合成的射频“标记”了荧光发射的各个像素点。这和无线通信系统中的频率多路复用类似，FIRE图像的一行内的每个像素点都被分配了自己的射频。单元光电探测器同时检测多个像素的荧光，并从探测器输出的频率分量中重新构建图像（运用数字域的并行锁相放大来分辨）。样品中每个点能以不同的射频来激发荧光的秘诀在于其中的马赫-曾德尔干涉仪（MZI），并使用声光器件来执行拍频激发多路复用。如上图a所示，MZI一路的光通过声光偏转器（AODF）产生频移（带宽为100 ...

scale CMOS[J]. Proceedings of the IEEE, 1999, 87(4): 537-570.[2] LOSURDO M, HINGERL K. Ellipsometry at the nanoscale[M]. Springer Heidelberg New York Dordrecht London. 2013.[3] DYRE J C. Universal low-temperature ac conductivity of macroscopically disordered nonmetals[J]. Physical Review B, 1993, 48 ...